| PART |
Description |
Maker |
| PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600 |
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12 A, 100 V, 0.146 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| SI4982DY SI4982DY-T1 |
2.6 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Dual N-Channel 100-V (D-S) MOSFET
Dual N-Channel, 100-V, (D-S) Rated MOSFET
|
VISHAY INTERTECHNOLOGY INC
VISAY[Vishay Siliconix]
|
| OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
100V Dual N-Channel MOSFET in a S-6 package
400V Dual N-Channel MOSFET in a S-6 package
500V Dual N-Channel MOSFET in a S-6 package
200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers
ETC
International Rectifier
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| SUM34N10-35 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SUD40N10-25 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175`C MOSFET
|
VISAY[Vishay Siliconix]
|
| FDS3992 |
N-Channel PowerTrench MOSFET 100V, 4.5A, 62mз 4.5 A, 100 V, 0.062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
N-Channel PowerTrench MOSFET 100V/ 4.5A/ 62m
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW540 IRFW540A IRFI540A IRFWI540A IRFW540ATM |
Advanced Power MOSFET 28 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
100V N-Channel A-FET
N-CHANNEL POWER MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FMP76-010T |
Trench P & N-Channel Power MOSFET Common Drain Topology
62 A, 100 V, 0.011 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PLASTIC, ISOPLUS, I4-PAK-5
|
IXYS Corporation
IXYS, Corp.
|
| 2SK383204 2SK3832 |
30 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| FDMS3672 |
N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm 22 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
|
